SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=0.1A ; I
B
=0
I
C
=3A; I
B
=0.6A
I
C
=8A; I
B
=2A
I
C
=8A; I
B
=2A
I
C
=3A ; V
CE
=5V
V
CE
=600V; V
BE
=-1.5V
V
CE
=300V; I
B
=0
V
EB
=8V; I
C
=0
I
C
=3A ; V
CE
=5V
I
C
=8A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=0.3A ; V
CE
=10V;f=1MHz
5
15
4
MIN
300
2N6307
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
I
CEV
I
CEO
I
EBO
h
FE-1
h
FE -2
C
OB
f
T
TYP.
MAX
UNIT
V
1.0
5.0
2.3
1.3
0.5
0.5
1.0
75
V
V
V
V
mA
mA
mA
250
pF
MHz
Switching times
t
r
t
s
t
f
Rise time
Storage time
Fall time
V
CC
=125V; I
C
=3.0A; I
B
=0.6A
0.6
1.6
0.4
µs
µs
µs
2
SAVANTIC [ Savantic, Inc. ]
