SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6300 2N6301
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX
UNIT
2N6300
2N6301
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A ; IB=0
V
80
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage IC=4A; IB=16mA
Collector-emitter saturation voltage IC=8A; IB=80mA
2.0
3.0
4.0
2.8
V
V
V
V
Base-emitter saturation voltage
Base -emitter on voltage
IC=8A; IB=80mA
IC=4A ; VCE=3V
VCE=60V; VBE(off)=1.5V
TC=150ꢀ
0.5
5.0
2N6300
ICEX
Collector cut-off current
Collector cut-off current
mA
VCE=80V; VBE(off)=1.5V
TC=150ꢀ
0.5
5.0
2N6301
2N6300
2N6301
VCE=30V; IB=0
ICEO
0.5
mA
mA
V
CE=40V; IB=0
IEBO
hFE-1
hFE-2
COB
Emitter cut-off current
DC current gain
VEB=5V; IC=0
2.0
IC=4A ; VCE=3V
750
100
18000
DC current gain
IC=8A ; VCE=3V
Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
200
pF
2
SAVANTIC [ Savantic, Inc. ]
