SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-66 package
·DARLINGTON
·Low collector saturation voltage
·Complement to type 2N6300/6301
APPLICATIONS
·General purpose power amplifier and
low frequency switching applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6298 2N6299
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2N6298
2N6299
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
2N6298
2N6299
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-60
-80
-60
-80
-5
-8
-16
-0.12
75
200
-65~200
V
A
A
A
W
V
UNIT
V
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
MAX
2.33
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
