SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6282 2N6283 2N6284
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX
UNIT
2N6282
2N6283
2N6284
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.2A ;IB=0
V
80
100
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage IC=10A; IB=40mA
Collector-emitter saturation voltage IC=20A ;IB=200mA
2.0
3.0
4.0
2.8
V
V
V
V
Base-emitter saturation voltage
Base-emitter on voltage
IC=20A ;IB=200mA
IC=10A ; VCE=3V
VCE=30V; IB=0
VCE=40V; IB=0
VCE=50V; IB=0
2N6282
ICEO
Collector cut-off current
Collector cut-off current
1.0
mA
2N6283
2N6284
2N6282
2N6283
2N6284
VCE=60V; VBE=-1.5V
TC=150ꢀ
0.5
5.0
VCE=80V; VBE=-1.5V
TC=150ꢀ
0.5
5.0
ICEX
mA
mA
VCE=100V; VBE=-1.5V
0.5
5.0
TC=150ꢀ
IEBO
hFE-1
hFE-2
COB
Emitter cut-off current
DC current gain
VEB=5V; IC=0
2.0
IC=10A ; VCE=3V
750
100
18000
DC current gain
IC=20A ; VCE=3V
Output capacitance
IE=0; VCB=10V;f=1MHz
400
pF
2