SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·High breakdown voltage
·Low collector saturation voltage
APPLICATIONS
·A wide variety of medium-to-high power,
high-voltage applications
·Series and shunt regulators
·High-fidelity amplifiers
·Power switching circuits
·Solenoid drivers
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6263 2N6264
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2N6263
2N6264
2N6263
2N6264
CONDITIONS
Open emitter
VALUE
140
170
120
150
7
3
4
2
2N6263
2N6264
T
C
=25
20
50
150
-65~200
UNIT
V
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
Open base
Open collector
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
2N6263
2N6264
MAX
8.75
3.5
UNIT
/W