SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6216
I
C
=0.1A ;I
B
=0
2N6217
V
CEsat-1
V
CEsat-2
V
BEsat
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2N6216
I
CEO
Collector cut-off current
2N6217
I
CBO
I
EBO
h
FE
f
T
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
V
CE
=70V; I
B
=0
V
CB
=RatedV
CBO
; I
E
=0
V
EB
=7V; I
C
=0
I
C
=5A ; V
CE
=5V
I
C
=1A ; V
CE
=10V
I
C
=4A; I
B
=0.4A
I
C
=6A; I
B
=0.75A
I
C
=6A; I
B
=0.75A
V
CE
=80V; I
B
=0
CONDITIONS
2N6216 2N6217
SYMBOL
MIN
150
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
140
1.2
1.6
2.0
V
V
V
5.0
mA
1.0
1.0
20
20
80
mA
mA
MHz
2
SAVANTIC [ Savantic, Inc. ]
