SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6121 2N6122 2N6123
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
45
TYP.
MAX
UNIT
2N6121
2N6122
2N6123
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A ;IB=0
V
60
80
VCEsat-1
VCEsat-2
VBE
Collector-emitter saturation voltage IC=1.5A;IB=0.15A
Collector-emitter saturation voltage IC=4.0A;IB=1.0A
0.6
1.4
1.2
V
V
V
Base-emitter on voltage
IC=1.5A ; VCE=2V
VCE=45V;VBE=1.5V
TC=125ꢀ
0.1
2.0
2N6121
2N6122
2N6123
VCE=60V;VBE=1.5V
TC=125ꢀ
0.1
2.0
ICEX
Collector cut-off current
mA
VCE=80V;VBE=1.5V
TC=125ꢀ
0.1
2.0
2N6121 VCE=45V;IB=0
2N6122 VCE=60V;IB=0
2N6123 VCE=80V;IB=0
VEB=5V; IC=0
ICEO
Collector cut-off current
Emitter cut-off current
DC current gain
1.0
mA
mA
IEBO
1.0
100
80
2N6121
25
20
10
hFE-1
IC=1.5A ; VCE=2V
2N6122
2N6123
2N6121
2N6122
2N6123
hFE-2
DC current gain
IC=4A ; VCE=2V
IC=1A ; VCE=4V
7
fT
Transition frequency
2.5
MHz
2