SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6106 2N6108 2N6110
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-30
-50
-70
TYP.
MAX
UNIT
2N6106
2N6108
2N6110
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=-0.1A ;IB=0
V
VCEsat
VBE
Collector-emitter saturation voltage
Base-emitter on voltage
2N6106
IC=-7A;IB=-3A
-3.5
-3.0
V
V
IC=-7A ; VCE=-4V
VCE=-20V; IB=0
VCE=-40V; IB=0
ICEO
Collector cut-off current
-1.0
mA
2N6108
2N6110
2N6106
2N6108
2N6110
VCE=-60V; IB=0
VCE=-40V; VBE=1.5V
VCE=-30V; BE=1.5V,TC=125ꢀ
-0.1
-2.0
VCE=-60V; VBE=1.5V
VCE=-50V; BE=1.5V,TC=125ꢀ
-0.1
-2.0
ICEX
IEBO
hFE-1
Collector cut-off current
Emitter cut-off current
DC current gain
mA
mA
VCE=-80V; VBE=1.5V
VCE=-70V; BE=1.5V,TC=125ꢀ
-0.1
-2.0
VEB=-5V; IC=0
-1.0
150
2N6106
2N6108
2N6110
IC=-2A ; VCE=-4V
30
2.3
10
IC=-2.5A ; VCE=-4V
IC=-3A ; VCE=-4V
hFE-2
COB
fT
DC current gain
IC=-7A ; VCE=-4V
Output capacitance
Transition frequency
IE=0 ; VCB=-10V;f=1MHz
IC=-0.5A ; VCE=-4V;f=1MHz
250
pF
MHz
2
SAVANTIC [ Savantic, Inc. ]
