SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6077 2N6078 2N6079
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·High breakdown voltage
APPLICATIONS
·For horizontal deflection output stages
of TV’s and CRT’s
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
PARAMETER
2N6077
V
CBO
Collector-base voltage
2N6078
2N6079
2N6077
V
CEO
Collector-emitter voltage
2N6078
2N6079
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
300
275
375
275
250
350
6
7
45
150
-65~200
V
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.28
UNIT
/W