SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High current ;high dissipation
·DARLINGTON
·Complement to type 2N5883;2N5884
APPLICATIONS
·They are intended for use in power linear
and low frequency switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6058 2N6059
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2N6058
2N6059
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
2N6058
2N6059
Open collector
Open base
CONDITIONS
Open emitter
VALUE
80
100
80
100
5
12
20
0.2
150
200
-65~200
V
A
A
mA
W
V
UNIT
V
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
