SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·DARLINGTON
·Complement to type 2N6055;2N6056
APPLICATIONS
·General-purpose power amplifier and low
frequency swithing applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6053 2N6054
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2N6053
2N6054
2N6053
2N6054
CONDITIONS
Open emitter
VALUE
-60
-80
-60
-80
-5
-8
-16
-120
T
C
=25
100
200
-65~200
UNIT
V
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
Open base
Open collector
V
V
A
A
mA
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.75
UNIT
/W