SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base -emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-0.1A ; I
B
=0
I
C
=-0.5A ;I
B
=-50mA
I
C
=-4A; I
B
=-0.8A
I
C
=-0.5A ; V
CE
=-4V
V
CE
=-90V;V
BE(off)
=-1.5V
T
C
=150
V
CE
=-30V; I
B
=0
V
EB
=-7V; I
C
=0
I
C
=-0.5A ; V
CE
=-4V
I
C
=-3A ; V
CE
=-4V
I
E
=0 ; V
CB
=-10V,f=0.1MHz
I
C
=-0.2A ; V
CE
=-10V;f=1MHz
3.0
25
6
MIN
-55
TYP.
2N6049
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE
I
CEX
I
CEO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
MAX
UNIT
V
-0.5
-2.0
-1.0
-1.0
-6.0
-0.5
-1.0
100
V
V
V
mA
mA
mA
200
pF
2