SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5883 2N5884
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter
sustaining voltage
2N5883
I
C
=-0.2A ;I
B
=0
2N5884
I
C
=-15A; I
B
=-1.5A
I
C
=-25A ;I
B
=-6.25A
I
C
=-25A ;I
B
=-6.25A
I
C
=-10A ; V
CE
=-4V
V
CB
=ratedV
CBO
; I
B
=0
2N5883
I
CEO
Collector cut-off current
2N5884
Collector cut-off current
(V
BE(off)
=1.5V)
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Trainsistion frequency
Collector base capacitance
V
CE
=-40V; I
B
=0
V
CE
=ratedV
CEO
;
V
CE
=ratedV
CEO
; T
C
=150
V
EB
=-5V; I
C
=0
I
C
=-3A ; V
CE
=-V
I
C
=-10A ; V
CE
=-4V
I
C
=-25A ; V
CE
=-4V
I
C
=-1A ; V
CE
=-10V;f=1MHz
I
E
=0; V
CB
=-10V;f=1MHz
35
20
4
4
500
MHz
pF
100
-1
mA
-10
-1
mA
V
CE
=-30V; I
B
=0
-2
mA
-80
-1
-4
-2.5
-1.5
-1
V
V
V
V
mA
CONDITIONS
MIN
-60
V
TYP.
MAX
UNIT
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
I
CBO
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
I
CEV
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
cb
Switching times
t
r
t
s
t
f
Rise time
Storage time
Fall time
I
C
=-10A ;I
B1
=- I
B2
=-1A
V
CC
=-30V
0.7
1.0
0.8
µs
µs
µs
2
SAVANTIC [ Savantic, Inc. ]
