SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5877 2N5878
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX
UNIT
2N5877
2N5878
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.2A ;IB=0
V
80
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage IC=5A;IB=0.5A
Collector-emitter saturation voltage IC=10A;IB=2.5A
1.0
3.0
2.5
1.5
0.5
V
V
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
IC=10A;IB=2.5A
IC=4A ; VCE=4V
VCB=ratedVCBO; IB=0
VCE=30V; IB=0
V
V
ICBO
mA
2N5877
Collector
ICEO
1.0
mA
cut-off current
2N5878
VCE=40V; IB=0
V
CE=ratedVCE; VBE=1.5V
0.5
5.0
ICEX
IEBO
hFE-1
hFE-2
hFE-3
fT
Collector cut-off current
Emitter cut-off current
DC current gain
mA
mA
TC=150ꢀ
VEB=5V; IC=0
1.0
IC=1A ; VCE=4V
35
20
4
DC current gain
IC=4A ; VCE=4V
100
DC current gain
IC=10A ; VCE=4V
Trainsistion frequency
IC=0.5A ; VCE=10V;f=1MHz
4
MHz
2
SAVANTIC [ Savantic, Inc. ]
