SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5871 2N5872
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
PARAMETER
2N5871
Collector-base voltage
2N5872
2N5871
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
Collector-emitter voltage
2N5872
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
-80
-5
-7
115
150
-65~200
V
A
W
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
/W