SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N5758
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N5759
2N5760
V
CEsat-1
V
CEsat-2
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
2N5758
I
CEO
Collector cut-off current
2N5759
2N5760
I
CEX
I
CBO
I
EBO
Collector cut-off current
Collector cut-off current
Emitter cut-off current
2N5758
h
FE-1
DC current gain
2N5759
2N5760
h
FE-2
C
OB
f
T
DC current gain
Output capacitance
Transition frequency
I
C
=6A ; V
CE
=2V
I
C
=3A ; V
CE
=2V
I
C
=3A; I
B
=0.3A
I
C
=6A ;I
B
=1.2A
I
C
=3A ; V
CE
=2V
V
CE
=50V; I
B
=0
V
CE
=60V; I
B
=0
V
CE
=70V; I
B
=0
I
C
=0.2A ;I
B
=0
SYMBOL
2N5758 2N5759 2N5760
CONDITIONS
MIN
100
120
140
TYP.
MAX
UNIT
V
1.0
2.0
1.5
V
V
V
1.0
mA
V
CE
=ratedV
CB
; V
BE(off)
=1.5V
T
C
=150
V
CE
=ratedV
CB;
I
B
=0
V
EB
=7V; I
C
=0
25
20
15
5.0
1.0
5.0
1.0
1.0
100
80
60
mA
mA
mA
I
E
=0 ; V
CB
=10V;f=0.1MHz
I
C
=0.5A ; V
CE
=20V
1.0
300
pF
MHz
2