SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5741 2N5742
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
TYP.
MAX
UNIT
2N5741
2N5742
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=-0.2A ;IB=0
V
-100
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage IC=-10A; IB=-1A
Collector-emitter saturation voltage IC=-20A ;IB=-4A
-1.0
-3.0
-1.8
-1.5
-0.1
V
V
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-10A; IB=-1A
V
IC=-10A ; VCE=-5V
VCB=Rated VCBO; IE=0
V
ICBO
mA
mA
mA
VCE= Rated VCEO; VBE(off)=1.5V
-0.5
-5.0
ICEX
TC=150ꢀ
IEBO
VEB=-5V; IC=0
-1.0
80
hFE-1
hFE-2
fT
IC=-10A ; VCE=-5V
IC=-20A ; VCE=-5V
IC=-1A ; VCE=-10V
20
10
10
DC current gain
Transition frequency
MHz
2