SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-0.1A ;I
B
=0
I
C
=-1A; I
B
=-0.1A
I
C
=-1A ;I
B
=-0.1A
I
C
=-1A ; V
CE
=-5V
V
CE
=-50V; I
B
=0
V
CB
=-125V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
I
C
=-100mA;V
CE
=10V
50
50
50
MIN
-100
TYP.
2N5676
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
V
BE
I
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
MAX
UNIT
V
-0.5
-1.2
-1.2
-0.5
-0.1
-0.1
V
V
V
mA
mA
mA
150
MHz
2