SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5660 2N5661
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
200
300
6
TYP. MAX UNIT
2N5660
2N5661
Collector-emitter
breakdown voltage
V(BR)CEO
IC=10mA ; IB=0
V
V(BR)EBO
VCEsat-1
VCEsat-2
VBEsat-1
VBEsat-2
Emitter-base breakdown voltage
IE=10µA ; IC=0
V
V
V
V
V
Collector-emitter saturation voltage IC=1A; IB=0.1A
Collector-emitter saturation voltage IC=2A; IB=0.4A
0.4
0.8
1.2
1.5
Base-emitter saturation voltage
Base-emitter saturation voltage
IC=1A ;IB=0.1A
IC=2A; IB=0.4A
2N5660
VCE=200V;VBE(off)=1.5V
VCE=300V;VBE(off)=1.5V
VCB=250V; IE=0
ICES
Collector cut-off current
Collector cut-off current
DC current gain
0.2
1.0
mA
mA
2N5661
2N5660
2N5661
2N5660
2N5661
2N5660
2N5661
ICBO
VCB=400V; IE=0
40
25
40
25
15
5
hFE-1
IC=50mA ; VCE=2V
IC=0.5A ; VCE=5V
120
75
hFE-2
DC current gain
hFE-3
hFE-4
COB
DC current gain
DC current gain
Output capacitance
IC=1A ; VCE=5V
IC=2A ; VCE=5V
IE=0 ; VCB=10V;f=1MHz
45
pF
µs
2N5660
2N5661
2N5660
2N5661
VCC=100V;IC=0.5A;IB1=-IB2=15mA
VCC=100V;IC=0.5A;IB1=-IB2=25mA
VCC=100V;IC=0.5A;IB1=-IB2=15mA
VCC=100V;IC=0.5A;IB1=-IB2=25mA
ton
Turn-on time
Turn-off time
0.25
0.85
1.2
toff
µs
2
SAVANTIC [ Savantic, Inc. ]
