SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter
breakdown voltage
2N5660
I
C
=10mA ; I
B
=0
2N5661
I
E
=10µA ; I
C
=0
I
C
=1A; I
B
=0.1A
I
C
=2A; I
B
=0.4A
I
C
=1A ;I
B
=0.1A
I
C
=2A; I
B
=0.4A
V
CE
=200V;V
BE(off)
=1.5V
CONDITIONS
SYMBOL
2N5660 2N5661
MIN
200
TYP.
MAX
UNIT
V
(BR)CEO
V
300
6
0.4
0.8
1.2
1.5
V
V
V
V
V
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
2N5660
I
CES
Collector cut-off current
2N5661
2N5660
V
CE
=300V;V
BE(off)
=1.5V
V
CB
=250V; I
E
=0
0.2
mA
I
CBO
Collector cut-off current
2N5661
2N5660
V
CB
=400V; I
E
=0
40
I
C
=50mA ; V
CE
=2V
2N5661
2N5660
25
40
I
C
=0.5A ; V
CE
=5V
2N5661
25
I
C
=1A ; V
CE
=5V
I
C
=2A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
2N5660
V
CC
=100V;I
C
=0.5A;I
B1
=-I
B2
=15mA
15
5
1.0
mA
h
FE-1
DC current gain
120
75
h
FE-2
DC current gain
h
FE-3
h
FE-4
C
OB
DC current gain
DC current gain
Output capacitance
45
pF
t
on
Turn-on time
2N5661
2N5660
V
CC
=100V;I
C
=0.5A;I
B1
=-I
B2
=25mA
V
CC
=100V;I
C
=0.5A;I
B1
=-I
B2
=15mA
V
CC
=100V;I
C
=0.5A;I
B1
=-I
B2
=25mA
0.25
µs
0.85
µs
1.2
t
off
Turn-off time
2N5661
2
SAVANTIC [ Savantic, Inc. ]
