SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N5655
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N5656
2N5657
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
2N5655
I
CEO
Collector cut-off current
2N5656
2N5657
2N5655
I
CBO
Collector cut-off current
2N5656
2N5657
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
h
FE-4
f
T
C
OB
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
Transition frequency
Output capacitance
I
C
=100mA ;I
B
=10mA
I
C
=250mA ;I
B
=25mA
SYMBOL
2N5655 2N5656 2N5657
CONDITIONS
MIN
250
TYP.
MAX
UNIT
I
C
=0.1A; I
B
=0;L=50mH
300
350
1.0
2.5
10
1.0
V
V
V
V
V
I
C
=500mA ;I
B
=100mA
I
C
=100mA ; V
CE
=10V
V
CE
=150V; I
B
=0
V
CE
=200V; I
B
=0
V
CE
=250V; I
B
=0
V
CB
=275V; I
E
=0
V
CB
=325V; I
E
=0
V
CB
=375V; I
E
=0
V
CE
= Rated V
CEO
; V
BE(off)
=1.5V
T
C
=100
V
EB
=6V; I
C
=0
I
C
=50mA ; V
CE
=10V
I
C
=100mA ; V
CE
=10V
I
C
=250mA ; V
CE
=10V
I
C
=500mA ; V
CE
=10V
I
C
=50mA ; V
CE
=10V;f=10MHz
f=100kHz ; V
CB
=10V;I
E
=0
25
30
15
5
10
0.1
mA
10
µA
0.1
1.0
10
mA
µA
250
MHz
25
pF
2
SAVANTIC [ Savantic, Inc. ]
