SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type 2N6031
·High collector-emitter sustaining voltage
·High DC current gain@I
C
=8A
·Low collector saturation voltage
APPLICATIONS
·For high power audio amplifier and
high voltage switching regulator
circuits applications
PINNING
PIN
1
2
3
Base
Emitter
DESCRIPTION
2N5631
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
140
140
7
16
20
5.0
200
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
