SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5629 2N5630
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N5629
I
C
=0.2A ;I
B
=0
2N5630
I
C
=10A; I
B
=1A
I
C
=16A ;I
B
=4A
I
C
=10A; I
B
=1A
I
C
=8A ; V
CE
=2V
V
CB
=ratedV
CBO
; I
E
=0
2N5629
2N5630
V
CE
=50V; I
B
=0
1.0
V
CE
=60V; I
B
=0
V
CE
=ratedV
CB;
V
BE(off)
=1.5V
T
C
=150
V
EB
=7V; I
C
=0
2N5629
h
FE-1
DC current gain
2N5630
h
FE-2
C
OB
f
T
DC current gain
Output capacitance
Transition frequency
I
C
=16A ; V
CE
=2V
I
E
=0 ; V
CB
=10V ;f=0.1MHz
I
C
=1A ; V
CE
=20V
1.0
I
C
=8A ; V
CE
=2V
20
4
500
pF
MHz
80
25
1.0
5.0
1.0
100
mA
mA
mA
120
1.0
2.0
1.8
1.5
1.0
V
V
V
V
mA
CONDITIONS
MIN
100
V
TYP.
MAX
UNIT
SYMBOL
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
I
CBO
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
I
CEO
Collector
cut-off current
I
CEV
I
EBO
Collector cut-off current
Emitter cut-off current
2
SAVANTIC [ Savantic, Inc. ]
