SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5614 2N5616 2N5618 2N5620
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
PARAMETER
2N5614
V
CBO
Collector-base voltage
2N5616/5618
2N5620
2N5614
V
CEO
Collector-emitter voltage
2N5616/5618
2N5620
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
80
100
120
60
80
100
5
5
50
150
-65~150
V
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.5
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
