SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5613 2N5615 2N5617 2N5619
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
PARAMETER
2N5613
V
CBO
Collector-base voltage
2N5615/5617
2N5619
2N5613
V
CEO
Collector-emitter voltage
2N5615/5617
2N5619
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-80
-100
-120
-60
-80
-100
-5
-5
50
150
-65~150
V
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.5
UNIT
/W