SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N5614
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N5616/5618
2N5620
V
CEsat
V
BE
I
CBO
I
CEO
I
EBO
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
2N5614/5618
h
FE
DC current gain
2N5616/5620
2N5614/5618
f
T
Transition frequency
2N5616/5620
2N5614 2N5616 2N5618 2N5620
SYMBOL
CONDITIONS
MIN
60
TYP.
MAX
UNIT
I
C
=50mA ;I
B
=0
80
100
V
I
C
=1A; I
B
=0.1A
I
C
=2.5A ; V
CE
=5V
V
CB
=Rated V
CBO
; I
E
=0
V
CE
= Rated V
CEO
,I
B
=0
V
EB
=5V; I
C
=0
70
I
C
=2.5A ; V
CE
=5V
30
70
I
C
=0.5A ; V
CE
=10V
60
0.5
1.5
0.1
1.0
0.1
200
90
V
V
mA
mA
mA
MHz
2