SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For high frequency power amplifier ;
audio power amplifier and drivers.
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5597 2N5599 2N5601 2N5603
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
)
SYMBOL
PARAMETER
2N5597
V
CBO
Collector-base voltage
2N5599/5601
2N5603
2N5597
V
CEO
Collector-emitter voltage
2N5599/5601
2N5603
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-80
-100
-120
-60
-80
-100
-5
-2
20
150
-65~150
V
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.37
UNIT
/W