SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5559
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBE
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=0.2A ;IB=0
120
IC=10A; IB=2A
IC=10A ; VCE=4V
VCE=140V; IB=0
5.0
5.7
5.0
V
V
ICEO
mA
mA
mA
VCE=120V; VBE(off)=1.5V
TC=150ꢀ
2.0
10
ICEX
IEBO
VEB=7V; IC=0
2.0
60
hFE
DC current gain
IC=4A ; VCE=2V
12
2
SAVANTIC [ Savantic, Inc. ]
