SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N5428
I
C
=50mA ; I
B
=0
2N5430
I
C
=2A ;I
B
=0.2A
I
C
=7A I;
B
=0.7A
I
C
=2A ;I
B
=0.2A
I
C
=7A I;
B
=0.7A
V
CE
=75V;V
BE(off)
=1.5V
T
C
=150
V
CE
=90V;V
BE(off)
=1.5V
T
C
=150
V
CB
=Rated V
CBO
;I
E
=0
V
EB
=6V; I
C
=0
I
C
=0.5A ; V
CE
=2V
I
C
=2A ; V
CE
=2V
I
C
=5A ; V
CE
=2V
I
C
=0.5A ; V
CE
=10V;f=10MHz
CONDITIONS
SYMBOL
2N5428 2N5430
MIN
80
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
100
0.7
1.2
1.2
2.0
0.1
1.0
0.1
1.0
0.1
0.1
60
60
40
20
MHz
240
V
V
V
V
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
2N5428
I
CEX
Collector cut-off current
2N5430
mA
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
mA
mA
2