SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N5427
I
C
=50mA ;I
B
=0
2N5429
V
CEsat-1
V
CEsat-2
V
BE sat-1
V
BE sat-2
I
CBO
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
2N5427
2N5429
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
I
C
=2A; I
B
=0.2A
I
C
=7A ;I
B
=0.7A
I
C
=2A; I
B
=0.2A
I
C
=7A ;I
B
=0.7A
V
CB
=Rated V
CBO
; I
E
=0
V
CE
= 75V; V
BE(off)
=-1.5V
T
C
=150
V
CE
= 90V; V
BE(off)
=-1.5V
T
C
=150
V
EB
=6V; I
C
=0
I
C
=0.5A ; V
CE
=2V
I
C
=2A ; V
CE
=2V
I
C
=5A ; V
CE
=2V
I
C
=0.5A ; V
CE
=10V;f=10MHz
CONDITIONS
2N5427 2N5429
SYMBOL
MIN
80
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
100
0.7
1.2
1.2
2.0
0.1
0.1
1.0
0.1
1.0
0.1
30
30
20
20
MHz
120
mA
V
V
V
V
mA
I
CEX
Collector
cut-off current
mA
2
SAVANTIC [ Savantic, Inc. ]
