SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2N5264
SYMBOL
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A ; I
B
=0
180
V
V
CEsat
Collector-emitter saturation voltage
I
C
=7A; I
B
=1.4A
1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=7A; I
B
=1.4A
1.2
V
I
CBO
Collector cut-off current
V
CB
=300V; I
E
=0
1
mA
I
EBO
Emitter cut-off current
V
EB
=7V; I
C
=0
0.1
mA
h
FE
DC current gain
I
C
=1A ; V
CE
=5V
30
300
f
T
Transition frequency
I
C
=1A ; V
CE
=10V
50
MHz
2