SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N4918 2N4919 2N4920
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-40
-60
-80
TYP.
MAX
UNIT
2N4918
2N4919
2N4920
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=-0.1A; IB=0
V
VCEsat
VBEsat
VBE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
2N4918
IC=-1.0A ;IB=-0.1A
IC=-1.0A ;IB=-0.1A
IC=-1A ; VCE=-1V
VCE=-20V; IB=0
-0.6
-1.3
-1.3
V
V
V
ICEO
Collector cut-off current
-0.5
-0.1
mA
2N4919
2N4920
VCE=-30V; IB=0
VCE=-40V; IB=0
ICBO
ICEX
IEBO
hFE-1
hFE-2
hFE-3
fT
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
VCB= Rated VCBO ;IE=0
mA
mA
mA
VCE= Rated VCEO; VBE(off)=1.5V
TC=125ꢀ
-0.1
-0.5
VEB=-5V; IC=0
-1.0
150
IC=-50mA ; VCE=-1V
IC=-500mA ; VCE=-1V
IC=-1A ; VCE=-1V
40
30
10
3.0
DC current gain
DC current gain
Transition frequency
Output capacitance
IC=-250mA ; VCE=-10V;f=1MHz
f=100kHz ; VCB=-10V;IE=0
MHz
pF
COB
100
2