SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Excellent safe operating area
·2N4912 complement to type 2N4900
APPLICATIONS
·Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N4910 2N4911 2N4912
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
)
SYMBOL
PARAMETER
2N4910
V
CBO
Collector-base voltage
2N4911
2N4912
2N4910
V
CEO
Collector-emitter voltage
2N4911
2N4912
V
EBO
I
C
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
40
60
80
40
60
80
5
1.0
1.0
25
150
-65~200
V
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
7.0
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
