SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Collector output capacitance
CONDITIONS
I
C
=0.2A ; I
B
=0
I
C
=4A; I
B
=0.4A
I
C
=4A; I
B
=0.4A
V
CE
=120V;V
BE(off)
=1.5V
V
CE
=100V;V
BE(off)
=1.5V T
C
=150
V
CE
=40V; I
B
=0
V
EB
=7V; I
C
=0
I
C
=4A ; V
CE
=2V
I
C
=4A ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
I
E
=0 ; V
CB
=10V; f=1MHz
12
20
40
MIN
75
2N3879
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CEV
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
TYP.
MAX
UNIT
V
1.2
2.0
0.5
4.0
5.0
1.0
100
80
V
V
mA
mA
mA
175
pF
2
SAVANTIC [ Savantic, Inc. ]
