SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N3791
I
C
=-0.2A ;I
B
=0
2N3792
V
CE(sat)
V
BE(on)-1
V
BE(on)-2
Collector-emitter saturation voltage
Base-emitter on voltage
Base-emitter on voltage
2N3791
2N3792
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
I
C
=-5A; I
B
=-0.5A
I
C
=-5A ; V
CE
=-2V
I
C
=-10A ; V
CE
=-4V
V
CE
=-60V; V
BE(off)
=-1.5V
T
C
=150
V
CE
=-80V; V
BE(off)
=-1.5V
T
C
=150
V
EB
=-7V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-3A ; V
CE
=-2V
I
C
=-0.5A;V
CE
=-10V
50
30
4
-80
CONDITIONS
SYMBOL
2N3791 2N3792
MIN
-60
TYP.
MAX
UNIT
V
V
V
CEO(SUS)
Collector-emitter
sustaining voltage
-1.0
-1.8
-4.0
-1.0
-5.0
-1.0
-5.0
-5.0
180
V
V
V
mA
mA
mA
I
CEX
Collector
cut-off current
MHz
2