SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter
sustaining voltage
2N3771
I
C
=0.2A ;I
B
=0
2N3772
2N3771
2N3772
2N3771
2N3772
2N3771
V
BE
Base-emitter on voltage
2N3772
2N3771
I
CEO
Collector cut-off current
2N3772
2N3771
I
CEV
Collector cut-off current
2N3772
2N3771
I
CBO
Emitter cut-off current
2N3772
2N3771
I
EBO
Emitter cut-off current
2N3772
2N3771
h
FE-1
DC current gain
2N3772
2N3771
h
FE-2
DC current gain
2N3772
f
T
Transition frequency
Second breakdown energy
with base forward biased
2N3771
2N3772
I
C
=20A ; V
CE
=4V
I
C
=1.0A ; V
CE
=4V;f=50kHz
V
CE
=40Vdc,t=1.0s,
Nonrepetitive
V
CE
=60Vdc,t=1.0s,
Nonrepetitive
I
C
=10A ; V
CE
=4V
I
C
=30A ; V
CE
=4V
V
EB
=7V; I
C
=0
I
C
=15A ; V
CE
=4V
V
CB
=100V; I
E
=0
V
EB
=5V; I
C
=0
V
CE
=50V; I
B
=0
V
CE
=50V; V
BE(off)
=1.5V
V
CE
=30V T
C
=150
V
CE
=100V; V
BE(off)
=1.5V
V
CE
=45V T
C
=150
V
CB
=50V; I
E
=0
I
C
=10A ; V
CE
=4V
V
CE
=30V; I
B
=0
I
C
=15A ;I
B
=1.5A
I
C
=10A ;I
B
=1.0A
I
C
=30A; I
B
=6A
CONDITIONS
SYMBOL
2N3771 2N3772
MIN
40
TYP.
MAX
UNIT
V
CEO(SUS)
V
60
2.0
V
1.4
V
CEsat-1
Collector-emitter
saturation voltge
V
CEsat-2
Collector-emitter
saturation voltage
4.0
I
C
=20A; I
B
=4A
I
C
=15A ; V
CE
=4V
2.7
V
V
2.2
10
2.0
10.0
5.0
10.0
2.0
mA
mA
mA
5.0
5.0
mA
15
60
5
0.2
3.75
MHz
I
s/b
A
2.5
2
SAVANTIC [ Savantic, Inc. ]
