SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3585
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
VBE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.2A ; IB=0
Collector-emitter saturation voltage IC=1A; IB=0.125A
300
0.75
1.4
V
Base-emitter saturation voltage
Base -emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=1A ;IB=0.1A
V
IC=1A ; VCE=10V
1.4
V
VCE=450V;VBE(off)=1.5V
VCE=300V;VBE(off)=1.5V TC=150ꢀ
1.0
3.0
ICEX
mA
mA
mA
ICEO
VCE=150V; IB=0
VEB=6V; IC=0
5.0
0.5
IEBO
hFE-1
IC=0.1A ; VCE=10V
IC=1A ; VCE=2V
IC=1A ; VCE=10V
40
8
hFE-2
DC current gain
80
hFE-3
DC current gain
25
100
2
SAVANTIC [ Savantic, Inc. ]
