SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base -emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=100mA ; I
B
=0
I
C
=2.7A; I
B
=0.9A
I
C
=2.7A ; V
CE
=4V
V
CE
=140V;V
BE(off)
=1.5V
V
CE
=140V;V
BE(off)
=1.5V T
C
=150
V
CE
=140V; I
B
=0
V
EB
=7V; I
C
=0
I
C
=0.5A ; V
CE
=4V
I
C
=2.7A ; V
CE
=4V
25
5
MIN
140
2N3441
SYMBOL
V
CEO(SUS)
V
CE(sat)
V
BE(on)
I
CEX
I
CEO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
6.0
6.7
5.0
6.0
10
1.0
100
V
V
mA
mA
mA
2