SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
2N3446
SYMBOL
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=30mA ;I
B
=0
100
V
V
CE(sat)-1
V
CE(sat)-2
V
BE(on)
I
CEO
Collector-emitter saturation voltage
I
C
=3A; I
B
=0.3A
1.2
V
Collector-emitter saturation voltage
I
C
=7A;I
B
=1.5A
3.0
V
Base-emitter on voltage
I
C
=3A ; V
CE
=5V
1.5
V
Collector cut-off current
V
CE
=100V; I
B
=0
0.7
mA
I
CBO
Collector cut-off current
V
CB
=100V; I
E
=0
0.1
mA
I
EBO
Emitter cut-off current
V
EB
=7V; I
C
=0
0.1
mA
h
FE-1
DC current gain
I
C
=3A ; V
CE
=5V
20
60
h
FE-2
DC current gain
I
C
=7A ; V
CE
=5V
4
2
SAVANTIC [ Savantic, Inc. ]
