SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=3A; I
B
=0.3A
I
C
=5A ;I
B
=1.0A
I
C
=3A ; V
CE
=4V
V
CE
=35V; I
B
=0
V
CB
=35V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=4V
I
C
=3A ; V
CE
=4V
40
20
MIN
35
TYP.
2N3226
SYMBOL
V
CEO(SUS)
V
CE(sat)-1
V
CE(sat)-2
V
BE(on)
I
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
MAX
UNIT
V
1.0
2.0
2.0
1.0
0.1
0.1
V
V
V
mA
mA
mA
2