SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N3196
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(sat)
VBE(on)
ICEO
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=-0.2A ;IB=0
-60
IC=-5A; IB=-1A
-1.5
-2.0
-5.0
-0.1
-1.0
V
IC=-5A ; VCE=-4V
VCE=Rated VCEO; IB=0
VCB=Rated VCBO; IE=0
VEB=-5V; IC=0
V
mA
mA
mA
ICBO
IEBO
hFE-1
DC current gain
IC=-0.3A ; VCE=-4V
IC=-3A ; VCE=-4V
30
15
hFE-2
DC current gain
2