2SK4100LS
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
650
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=10mA, V =0V
V
µA
nA
V
(BR)DSS
D GS
I
V
V
V
V
=520V, V =0V
GS
100
DSS
DS
GS
DS
DS
I
=±30V, V =0V
DS
±100
GSS
V
(off)
GS
=10V, I =1mA
3
2
5
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
yfs
=10V, I =3A
4
S
D
R
DS
(on)
I
=3A, V =10V
1.05
600
110
24
1.35
Ω
D GS
Ciss
Coss
Crss
V
V
V
=30V, f=1MHz
=30V, f=1MHz
=30V, f=1MHz
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
18
Rise Time
t
r
41
Turn-OFF Delay Time
t (off)
d
78
Fall Time
t
28
f
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=200V, V =10V, I =6A
GS
23
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=200V, V =10V, I =6A
GS
4.5
13
D
=200V, V =10V, I =6A
GS
D
V
SD
I =6A, V =0V
S GS
0.9
1.2
Package Dimensions
unit : mm (typ)
7509-002
4.5
10.0
3.2
2.8
0.9
1.2
1.2
0.7
0.75
1 : Gate
1
2
3
2 : Drain
3 : Source
2.55
2.55
SANYO : TO-220FI(LS)
Switching Time Test Circuit
Avalanche Resistance Test Circuit
V
V
=200V
IN
DD
L
10V
0V
≥50Ω
RG
I
=3A
D
V
R =66.7Ω
IN
L
D
V
OUT
PW=10µs
D.C.≤0.5%
2SK4100LS
10V
0V
V
50Ω
DD
G
2SK4100LS
P. G
S
R
=50Ω
GS
No. A0778-2/5
SANYO [ SANYO SEMICON DEVICE ]
