2SB1216/2SD1816
( ) : 2SB1216
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
V
V
(–)120
(–)100
(–)6
(–)4
(–)8
1
V
V
CBO
CEO
EBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
I
A
C
Collector Current (Pulse)
Collector Dissipation
I
A
CP
P
W
W
˚C
˚C
C
Tc=25˚C
20
Junction Temperature
Storage Temperature
Tj
150
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
Parameter
Symbol
Conditions
Unit
min
typ
max
(–)1
Collector Cutoff Current
I
V
=(–)100V, I =0
µA
µA
CBO
CB
EB
CE
CE
CE
E
Emitter Cutoff Current
DC Current Gain
I
V
V
V
V
=(–)4V, I =0
(–)1
EBO
C
h
h
1
=(–)5V, I =(–)0.5A
C
=(–)5V, I =(–)3A
C
=(–)10V, I =(–)0.5A
C
70*
400*
FE
2
40
FE
Gain-Bandwidth Product
f
(130)
180
MHz
MHz
pF
mV
mV
V
T
Output Capacitance
C
V
I
=(–)10V, f=1MHz
(65)40
150
ob
CB
Collector-to-Emitter Saturation Voltage
V
V
=(–)2A, I =(–)0.2A
400
CE(sat)
C
B
(–200) (–500)
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
I
I
I
=(–)2A, I =(–)0.2A
B
=(–)10µA, I =0
E
(–)0.9
(–)1.2
BE(sat)
C
C
C
V
V
V
(–)120
(–)100
(–)6
V
(BR)CBO
(BR)CEO
(BR)EBO
=(–)1mA, R =∞
V
BE
I =(–)10µA, I =0
V
E
C
t
See specified Test Circuit
100
(800)
900
ns
on
Storage Time
t
See specified Test Circuit
ns
stg
ns
Fall Time
t
f
See specified Test Circuit
50
ns
* : The 2SB1216/2SD1816 are classified by 0.5A h as follows :
FE
70
Q
140
100
R
200
140
S
280
200
T
400
Switching Time Test Circuit
No.2540–2/5
SANYO [ SANYO SEMICON DEVICE ]
