Ordering number : ENA1110
15GN03NA
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
15GN03NA
VHF High-frequency Amplifier Applications
Applications
•
VHF, RF, MIXER, OSC, IF amplifier.
Features
•
High cutoff frequency : f =1.5GHz typ.
High gain
T
: ⏐S21e⏐2=11.5dB typ (f=0.4GHz).
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
20
10
CBO
CEO
EBO
V
3
V
I
70
mA
mW
°C
°C
C
Collector Dissipation
P
400
150
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
0.1
1
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
I
V
V
V
V
V
V
=10V, I =0A
μA
μA
CBO
CB
EB
CE
CE
CB
CB
E
=2V, I =0A
EBO
C
h
=5V, I =10mA
100
1.0
180
FE
C
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Marking : ZC
f
=5V, I =20mA
C
1.5
1.1
0.7
GHz
pF
T
Cob
Cre
=10V, f=1MHz
=10V, f=1MHz
1.4
pF
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
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42809AB MS IM TC-00001956
No. A1110-1/6
SANYO [ SANYO SEMICON DEVICE ]
