THYRISTOR MODULE
(
)
PD,PE
PK 90FG
UL;E76102（M）
Power Thyristor/Diode Module PK90FG series are designed for various rectifier circuits
and power controls. For your circuit application, following internal connections and wide
voltage ratings up to 1600V are available. and electrically isolated mounting base make
your mechanical design easy.
92．０�
2０．０�2０．０�2０．０�
１７．５�
２-φ6 ．０�
●
●
T(AV)
T(RMS)
TSM
140A, I
I
90A, I
2300A
di/dt 100A/μs
Internal Configurations
● dv/dt 1000V/μs
M５× 1０�
２．８�
K2
G2
4-＃１１０TAB
（Applications）
Various rectifiers
K2
G2
3
2
1
K1G1
（A2）�
（K2）�
3
2
1
A1K2
K1
（A2）�
（K2）�
A1K2
NAME PLATE
AC/DC motor drives
Heater controls
Light dimmers
PK
PE
８０．０±０．２�
K2
3
2
1
K1G1
（A2）�
（K2）�
A1K2
Static switches
Unit：
A
PD
■Maximum Ratings
（Tj＝25℃ unless otherwise specified）
Ratings
PK90FG40
PD90FG40
PE90FG40
PK90FG80
PD90FG80
PE90FG80
PK90FG120
PD90FG120
PE90FG120
PK90FG160
PD90FG160
PE90FG160
Symbol
Item
Unit
VRRM
VRSM
VDRM
400
480
400
800
960
800
1200
1300
1200
1600
1700
1600
V
V
V
＊Repetitive Peak Reverse Voltage
＊Non-Repetitive Peak Reverse Voltage
＊Repetitive Peak off-state Voltage
Ratings
Symbol
Item
Conditions
Unit
A
T（AV）
I
90
＊Average On-state Current
＊R.M.S. On-state Current
＊Surge On-state Current
Single phase, half wave, 180°conduction, Tc＝82℃
T（RMS）
I
140
A
Single phase, half wave, 180°conduction, Tc＝82℃
1
TSM
I
Z
A
／ Cycle, 50/60H , Peak Value, non-repetitive
2100/2300
2
2
2
2
I t
Value for one cycle surge current
22040
A S
＊I t
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
10
W
W
G（AV）
P
1
FGM
I
3
10
A
FGM
V
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-state Current
V
RGM
V
5
V
1
G
D
DRM
G
100
di/dt
I ＝100mA，V ＝／V ，di /dt＝0.1A/μs
A/μs
V
2
ISO
V
A.C. 1minute
2500
＊Isolation Breakdown Voltage（R.M.S.）
Tj
＊
Operating Junction Temperature
－40 to ＋125
－40 to ＋125
2.7（28）
2.7（28）
170
℃
℃
Tstg
＊Storage Temperature
Mounting（M5） Recommended Value 1.5-2.5（15-25）
Mounting
Torque
N･m
（㎏f･B）
Termina
（l M5） Recommended Value 1.5-2.5（15-25）
Mass
Typical Value
g
■Electrical Characteristics
（Tj＝25℃ unless otherwise specified）
Ratings
25
Symbol
Item
Conditions
Unit
mA
mA
V
DRM
I
Repetitive Peak off-state Current,max
Repetitive Peak Reverse Current,max
D
DRM
Tj＝125℃，V ＝V
RRM
I
D
DRM
25
＊
Tj＝125℃，V ＝V
TM
V
T
1.6
＊On-state Voltage,max
Gate Trigger Current,max
Gate Trigger Voltage,max
Gate Non-Trigger Voltage,min
Critical Rate of Rise of off-state Voltage,min
I ＝270A
GT
I
D
T
50
mA
V
V ＝6V，I ＝1A
GT
V
D
T
3
V ＝6V，I ＝1A
1
GD
V
D
DRM
0.25
1000
0.30
V
Tj＝125℃，V ＝
／
2V
2
D
DRM
dv/dt
Tj＝125℃，V ＝／V
V/μs
℃/W
3
Junction to case
Rth（j-c）＊Thermal Impedance,max
＊mark：Thyristor and Diode part. No mark：Thyristor part
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