(
)
PK PD,PE,KK 40F
Gate Characteristics
On-State Voltage max
3
２�
１０
Peak Forward Gate Voltage（10V）�
１�
５�
１０
５�
２�
２�
１０
２�
０�
５�
１０
５�
２�
125℃� 25℃� －30℃�
Maximum Gate Voltage that will not trigger any unit
１�
２�
１０
－
１０１�
５�
０�
１０１� ２�
５� １０
２�
５� １０
２�
５�
－
２�
３�
１�
２�
�
３�
4
５�
Gate Curren（t mA）�
On-State Voltage（V）�
Average On-State Current Vs Power Dissipation�
Average On-State Current Vs Maximum Allowable�
Case Temperature（Single phase half wave）
�
（Single phase half wave）�
１３０�
８０�
D.C.
Per one element
2
７０�
６０�
５０�
４０�
３０�
２０�
１０�
０�
１２０�
１１０�
１００�
Per one element
360。�
: Conduction Angle
θ＝180゜�
θ＝120゜�
θ＝90゜�
2
θ＝60゜�
θ＝30゜�
９０�
８０�
７０�
６０�
５０�
360。�
: Conduction Angle
θ＝60゜� θ＝120゜�
D.C.
θ＝180゜�
θ＝30゜� θ＝90゜�
０� １０� ２０� ３０� ４０� ５０� ６０� ７０� ８０�
０� １０� ２０� ３０� ４０� ５０� ６０� ７０� ８０�
Average On-State Curren（t A）�
Average On-State Curren（t A）�
Surge On-State Current Rating�
（Non-Repetitive）�
Transient Thermal Impedance
１．０�
１６００�
Per one element
Per one element
Ｔｊ=２５℃ start
０．９�
０．８�
０．７�
０．６�
０．５�
０．４�
０．３�
０．２�
０．１�
０�
Junction to case
１２００�
８００�
４００�
60Hz
50Hz
０� 0
１０
-３�
-２�
-１�
０�
１�
２�
３�
４�
１�
2
１０
１０
１０
１０
１０
１０
１０
１０
２�
５�
１０
２�
５�
１０
�
Time t（sec）�
Time（Cycles）�
B６；Six pulse bridge connection�
Ｗ３；Three phase�
W１；Bidirectional connection
bidiretional connection
Output Current
�
B２；Two Pluse bridge connection
４００�
９０�
Conduction Angle 180゜�
Id（Aav.）�
Id（Ar.m.s.）�
Rth:0.8℃/W
Rth:0.6℃/W
W3
B6
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:0.4℃/W
Rth:0.2℃/W
３００�
２００�
１００�
Rth:1.0℃/W
１００�
１１０�
９０�
Rth:0.1℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
B2
Rth:0.1℃/W
１００�
１１０�
�
９０�
W1
Id（Aav.）�
１００�
１１０�
１２０�
１２５�
Id（Ar.m.s.）�
１２０�
１２５�
１２０�
１２５�
０�
４０�
８０�
１２０�
０� ２０�４０�６０�８０�１００�０�
４０�
８０�
１２０�
０�
４０�
８０�
１２０�
Output Curren（t A）� Ambient Temperature（℃）�
Ambient Temperature（℃）�
Ambient Temperature（℃）�
SANREX [ SANREX CORPORATION ]
