(
)
PK PD,PE,KK 40F
Gate Characteristics
On-State Voltage max
3
2�
10
Peak Forward Gate Voltage(10V)�
1�
5�
10
5�
2�
2�
10
2�
0�
5�
10
5�
2�
125℃� 25℃� -30℃�
Maximum Gate Voltage that will not trigger any unit
1�
2�
10
-
101�
5�
0�
101� 2�
5� 10
2�
5� 10
2�
5�
-
2�
3�
1�
2�
�
3�
4
5�
Gate Curren(t mA)�
On-State Voltage(V)�
Average On-State Current Vs Power Dissipation�
Average On-State Current Vs Maximum Allowable�
Case Temperature(Single phase half wave)
�
(Single phase half wave)�
130�
80�
D.C.
Per one element
2
70�
60�
50�
40�
30�
20�
10�
0�
120�
110�
100�
Per one element
360。�
: Conduction Angle
θ=180゜�
θ=120゜�
θ=90゜�
2
θ=60゜�
θ=30゜�
90�
80�
70�
60�
50�
360。�
: Conduction Angle
θ=60゜� θ=120゜�
D.C.
θ=180゜�
θ=30゜� θ=90゜�
0� 10� 20� 30� 40� 50� 60� 70� 80�
0� 10� 20� 30� 40� 50� 60� 70� 80�
Average On-State Curren(t A)�
Average On-State Curren(t A)�
Surge On-State Current Rating�
(Non-Repetitive)�
Transient Thermal Impedance
1.0�
1600�
Per one element
Per one element
Tj=25℃ start
0.9�
0.8�
0.7�
0.6�
0.5�
0.4�
0.3�
0.2�
0.1�
0�
Junction to case
1200�
800�
400�
60Hz
50Hz
0� 0
10
-3�
-2�
-1�
0�
1�
2�
3�
4�
1�
2
10
10
10
10
10
10
10
10
2�
5�
10
2�
5�
10
�
Time t(sec)�
Time(Cycles)�
B6;Six pulse bridge connection�
W3;Three phase�
W1;Bidirectional connection
bidiretional connection
Output Current
�
B2;Two Pluse bridge connection
400�
90�
Conduction Angle 180゜�
Id(Aav.)�
Id(Ar.m.s.)�
Rth:0.8℃/W
Rth:0.6℃/W
W3
B6
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:0.4℃/W
Rth:0.2℃/W
300�
200�
100�
Rth:1.0℃/W
100�
110�
90�
Rth:0.1℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
B2
Rth:0.1℃/W
100�
110�
�
90�
W1
Id(Aav.)�
100�
110�
120�
125�
Id(Ar.m.s.)�
120�
125�
120�
125�
0�
40�
80�
120�
0� 20�40�60�80�100�0�
40�
80�
120�
0�
40�
80�
120�
Output Curren(t A)� Ambient Temperature(℃)�
Ambient Temperature(℃)�
Ambient Temperature(℃)�