60V N -ch MOSFET
2SK3711
December 2005
■Features
•
Low on-resistance
•
Built-in gate protection diode
•
Avalanche energy capability guaranteed
■Package—TO3P
■Applications
•
Electric power steering
•
High current switching
■Equivalent
circuit
D (2)
G (1)
S (3)
Absolute maximum ratings
(Ta=25°C)
Characteristic
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Single Pulse Avalanche Energy
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
(pulse)
*1
PD
EAS
*2
Tch
Tstg
Rating
60
±20
±70A
±140A
130 (Tc=25°C)
468
150
-55 to 150
Unit
V
V
A
A
W
mJ
°C
°C
*1 PW≤100μs, duty cycle≤1%
*2 V
DD
=20V, L=1mH, I
Lp
=25A, unclamped, R
G
=50Ω. See Fig.1
.
Sanken Electric Co.,Ltd.
http://www.sanken-ele.co.jp/en/
T02-002EA-05112
4
1/9
SANKEN [ SANKEN ELECTRIC ]
