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2SD2643 参数 Datasheet PDF下载

2SD2643图片预览
型号: 2SD2643
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型晶体管(补键入2SB1687 ) [Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)]
分类和应用: 晶体晶体管功率双极晶体管开关局域网
文件页数/大小: 1 页 / 29 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Equivalent circuit
C
Darlington
2SD2643
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=110V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=5mA
I
C
=5A, I
B
=5mA
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
Ratings
100
max
100
max
110
min
5000
min
2.5
max
3.0
max
60
typ
55
typ
V
V
16.2
B
(7 0Ω )
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1687)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
110
110
5
6
1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
23.0
±0.3
V
9.5
±0.2
µ
A
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
6
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
5
I
B2
(mA)
–5
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
6.2typ
t
f
(
µ
s)
1.1typ
3.35
B
C
E
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
A
1m
V
C E
( sat ) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a g e V
C E(sa t)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
6
( V
CE
= 4 V )
6
5mA
0.
A
5m
0 .4 m A
0. 3m A
C o l l e c to r C u r r e n t I
C
( A)
C ol l e c t o r C ur r e nt I
C
( A )
5˚C
0.2m A
(C
as
Temp
12
)
eT
4
2
4
em
p)
(Case
2
1
I
C
= 3 A
2
25˚C
I
B
=0.1mA
0
0
2
4
6
0
0 .1
0.5
1
5
10
50
100
0
0
1
–30˚C
(Case
Temp
I
C
= 5 A
)
2
3.0
2.5
C ol l ec t or - Emi t te r V ol ta ge V
C E
(V)
Ba se C u r r e nt I
B
( m A)
Ba s e - E m i t to r V o l t a ge V
BE
( V )
h
FE
– I
C
Characteristics
(Typical)
( V
CE
= 4 V )
50000
DC Cu r r e nt Ga i n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4V )
50000
D C Cu r r en t G a i n h
FE
1 25 ˚ C
10000
5000
25 ˚ C
Transient Thermal Resistance
θ
j- a
( ˚ C /W )
5
θ
j - a
– t Characteristics
10000
5000
Typ
1000
500
1000
500
–3 0˚ C
1
0. 5
1
5
10
5 0 10 0
Time t(ms)
50 0 1 0 0 0 20 0 0
100
0.01
0. 1
0. 5
1
56
100
0 .0 1
0 .1
0. 5
1
56
C ol l ec t or C urre nt I
C
( A)
C o ll e ct o r C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
80
20
Safe Operating Area
(Single Pulse)
60
P c – Ta Derating
Typ
10
5
10
60
Col lec t o r Cu r r e n t I
C
(A )
M ax im u m P o w e r D i s s i p a t i o n P
C
( W )
10
C ut- off F r e q u e n c y f
T
(M H
Z
)
W
m
D
ith
s
C
0m
s
40
In
fin
ite
he
40
1
0 .5
Without Heatsink
Natural Cooling
0 .1
at
si
nk
20
20
Without Heatsink
3
5
10
50
1 00
20 0
3 .5
0
0
25
50
75
100
125
1 50
0
–0.02
– 0. 1
–1
–6
0 .0 5
C o ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
Emi t t e r C u rren t I
E
(A)
Am b i e n t T e m p er a t u r e T a( ˚ C )
162