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2SD2642 参数 Datasheet PDF下载

2SD2642图片预览
型号: 2SD2642
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型晶体管(补键入2SB1687 ) [Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 29 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Equivalent circuit
C
Darlington
2SD2642
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
Conditions
V
CB
=110V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=5mA
I
C
=5A, I
B
=5mA
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
Ratings
100
max
100
max
110
min
5000
min
2.5
max
3.0
max
60
typ
55
typ
V
V
13.0min
B
(7 0
)
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1687)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
110
110
5
6
1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
16.9
±0.3
.
(BR)CEO
V
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
V
8.4
±0.2
µ
A
MHz
pF
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
∗h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
6
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
5
I
B2
(mA)
–5
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
6.2typ
t
f
(
µ
s)
1.1typ
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
A
1m
V
C E
( sat ) – I
B
Characteristics
(Typical)
Co l l e c t o r - Em i t t e r Sa t u r a ti o n V o lt a ge V
C E(s at)
(V )
3
6
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
=4 V )
6
5mA
0.
A
5m
0 .4 m A
0. 3m A
C o l l e c t o r Cu r r e n t I
C
( A )
Co l l e c t o r Cu r r e n t I
C
( A)
12
5˚C
0.2m A
(C
a
se
Temp
(Case
–30˚C
)
(Case
Temp
)
I
C
= 5 A
1
2
I
C
= 3 A
2
I
B
=0.1mA
0
0
2
4
6
0
0.1
0.5
1
5
10
50
100
0
0
1
25˚C
Te
4
2
4
mp
)
2
2.5
Co l l ec t or - Emi t t er V ol ta ge V
C E
(V )
Ba se Cu r r e nt I
B
( m A)
B as e - Em i t t o r Vo l t a g e V
BE
( V )
(V
C E
=4 V)
50000
DC C ur r e nt Ga i n h
F E
DC C u r r e nt Ga i n h
FE
50000
1 25 ˚ C
10000
5000
2 5˚ C
( V
C E
= 4V )
Transient Thermal Resistance
θ
j- a
( ˚ C /W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j- a
– t Characteristics
4
10000
5000
Typ
1000
500
1000
500
– 30 ˚ C
1
0.5
0.3
100
0.01
0.1
0. 5
1
56
100
0 .0 1
0. 1
0.5
1
56
1
5
10
50
Time t(ms)
10 0
5 00 1 00 0
C ol l e ct o r Cu rre nt I
C
(A )
C o ll e ct o r Cu r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V)
80
30
Safe Operating Area
(Single Pulse)
30
Pc – Ta Derating
Typ
10
C ut- off F r e q u e n c y f
T
( M H
Z
)
60
C olle c to r C u r r e n t I
C
( A )
5
DC
10
10
m
s
0m
s
M a xim u m P o w e r D i s s i p a t i o n P
C
( W )
W
ith
20
In
fin
ite
he
40
at
1
0.5
Without Heatsink
Natural Cooling
0.1
si
nk
10
20
Without Heatsink
2
5
10
50
1 00
2 00
0
0
–0.02
– 0. 1
–1
–6
0.05
3
0
25
50
75
1 00
12 5
1 50
Emi t t e r Curre nt I
E
(A )
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
A m b i e n t T e m p e r a tu r e T a ( ˚ C )
161