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2SD2641 参数 Datasheet PDF下载

2SD2641图片预览
型号: 2SD2641
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型晶体管(补键入2SB1685 ) [Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 29 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Equivalent circuit
C
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
110
110
5
6
1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SD2641
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=110V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=5mA
I
C
=5A, I
B
=5mA
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
Ratings
100
max
100
max
110
min
5000
min
2.5
max
3.0
max
60
typ
55
typ
V
V
MHz
pF
20.0min
4.0max
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
B
(70
)
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1685)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
5.0
±0.2
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
2
0.65
+0.2
-0.1
1.4
∗h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
6
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
5
I
B2
(mA)
–5
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
6.2typ
t
f
(
µ
s)
1.1typ
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
A
1m
V
CE
(sat) – I
B
Characteristics
(Typical)
C o l l e c to r - E m i t t er S a t ur a t i o n Vo l ta g e V
CE (sa t)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
6
( V
CE
= 4V )
6
5mA
0.
A
5m
0 .4 m A
0. 3m A
C o l l e c to r C u r r e n t I
C
( A )
C o l l e c to r C u r r e n t I
C
( A )
12
5˚C
0.2m A
(C
a
se
Temp
(Case
–30˚C
)
(Case
Temp
)
I
C
= 5 A
1
2
I
C
= 3 A
2
I
B
=0.1mA
0
0
2
4
6
0
0.1
0.5
1
5
10
50
100
0
0
1
25˚C
Te
4
2
4
mp
)
2
2.5
Co l l ect o r - Em i t t er V ol ta ge V
C E
(V )
Bas e C ur r en t I
B
( m A)
B as e - Em i t t o r Vo l t a g e V
BE
( V)
(V
C E
=4 V)
50000
D C Cu r r en t G a i n h
FE
D C Cu rr en t Ga i n h
FE
50000
12 5˚ C
10000
5000
2 5˚ C
( V
C E
= 4V)
Transient Thermal Resistance
θ
j -a
( ˚C /W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j- a
– t Characteristics
5
10000
5000
Typ
1000
500
1000
500
–3 0 ˚ C
1
0.5
1
5
10
50 100
Time t(ms)
5 0 0 1 00 0 2 0 0 0
100
0.01
0.1
0. 5
1
56
100
0.01
0.1
0 .5
1
56
C o ll e ct o r C ur ren t I
C
(A)
C o ll e ct o r Cu r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V)
80
20
Safe Operating Area
(Single Pulse)
60
Pc – Ta Derating
Typ
10
5
10
60
Co lle cto r C u r r e nt I
C
( A )
M a xi mu m Po we r Di s s i p a ti o n P
C
(W )
10
Cu t-o ff F re q u e n c y f
T
(M H
Z
)
W
m
D
s
C
ith
0m
s
40
In
fin
ite
he
40
1
0.5
at
si
nk
20
20
Without Heatsink
Natural Cooling
0.1
Without Heatsink
3
5
10
50
10 0
200
3.5
0
0
25
50
75
1 00
125
150
0
–0.02
–0 . 1
–1
–6
0.05
C ol l ec t or - Em i t te r Vol t ag e V
C E
( V)
Em it t e r Cu rre nt I
E
(A )
A m b i e n t T em p e r a tu r e T a ( ˚ C )
160